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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation Pd
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Transistor Case Style | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$657.000 | Chopper | N Channel | N Channel | 204A | 1.2kV | Module | 4V | 1.36kW | 1.36kW | 150°C | ||||||
Each | 1+$644.200 | Chopper | N Channel | N Channel | 300A | 1.2kV | Module | 5.6V | 1.36kW | 1.36kW | 150°C | ||||||
Each | 1+$696.800 | Half Bridge | Dual N Channel | Dual N Channel | 204A | 1.2kV | Module | 4V | 1.36kW | 1.36kW | 150°C | ||||||
Each | 1+$921.600 | Chopper | N Channel | N Channel | 300A | 1.2kV | Module | 5.6V | 1.36kW | 1.36kW | 150°C | ||||||
