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Silicon Carbide (SiC) MOSFETs & Modules :
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$76.070 5+$70.710 10+$65.340 25+$64.030 50+$62.730 More Pricing... | Single | N Channel | N Channel | 120A | 650V | 0.0067ohm | 6700µohm | TO-247 | 4Pins | 12V | 4.7V | 789W | 789W | 175°C | ||||||
STARPOWER | Each | 1+$778.140 5+$769.940 10+$761.980 25+$729.810 | Half Bridge | Dual N Channel | Dual N Channel | 299A | 1.2kV | 0.0067ohm | 8700µohm | Module | - | 18V | 5.6V | - | - | 150°C | |||||
