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Silicon Carbide (SiC) MOSFETs & Modules :
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Gate Source Threshold Voltage Max
=2.83V
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Drain Source Voltage Vds
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$196.040 5+$193.880 10+$191.710 25+$180.970 | Half Bridge | N Channel | N Channel | 304A | 1.2kV | 0.00548ohm | 5480µohm | Module | 36Pins | 20V | 2.83V | 950W | 950W | 175°C | ||||||
Each | 1+$223.200 5+$215.490 10+$207.770 40+$200.060 | Half Bridge | - | N Channel | 304A | 1.2kV | - | 0.00548ohm | Module | - | 20V | 2.83V | - | 950W | 175°C | ||||||
