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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=410mohm
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Packaging
| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Cut Tape | 1+$11.720 10+$8.100 25+$7.490 50+$6.890 100+$6.280 | Single | N Channel | 7.6A | 1.7kV | 410mohm | D2PAK | 7Pins | 12V | 6V | 100W | 175°C | ||||||
Each (Supplied on Cut Tape) Cut Tape | 1+$9.280 10+$6.460 25+$5.900 50+$5.360 100+$4.800 More Pricing... | Single | N Channel | 7.6A | 1.2kV | 410mohm | D2PAK | 7Pins | 12V | 6V | 100W | 175°C | ||||||
