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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.156ohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 250+$94.150 | Single | N Channel | 34A | 3.3kV | 0.156ohm | TO-263 (D2PAK) | 7Pins | 20V | 4.5V | 366W | 175°C | ||||||
14AM5526 | Each (Supplied on Cut Tape) Cut Tape | 100+$127.480 | Single | N Channel | 33A | 3.3kV | 0.156ohm | TO-263 (D2PAK) | 7Pins | 20V | 3.5V | 366W | 175°C | |||||
