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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.0274ohm
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MOSFET Module Configuration
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Drain Source Voltage Vds
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$24.070 5+$23.130 10+$22.090 25+$21.150 50+$20.110 More Pricing... | Single | N Channel | 100A | 1.2kV | 0.0274ohm | TO-247 | 4Pins | 20V | 4V | 517W | 175°C | ||||||
Each | 1+$29.840 5+$28.680 10+$27.380 25+$26.220 50+$24.930 More Pricing... | Single | N Channel | 100A | 1.2kV | 0.0274ohm | TO-247 | 3Pins | 20V | 4V | 517W | 175°C | ||||||
