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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.00444ohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
12AM0944 RoHS | Each | 1+$303.830 5+$297.750 10+$291.680 25+$285.600 | Half Bridge | Dual N Channel | 220A | 1.2kV | 0.00444ohm | Module | 7Pins | 18V | 5.1V | 175°C | 62 mm C Series | |||||
12AM0943 RoHS | Each | 1+$289.190 5+$269.050 10+$248.900 25+$243.920 | Half Bridge | Dual N Channel | 190A | 1.2kV | 0.00444ohm | Module | 7Pins | 18V | 5.1V | 175°C | 62 mm C Series | |||||
