60mA Single Bipolar Junction Transistors - BJT | Newark Electronics

Find a huge range of 60mA Single Bipolar Junction Transistors - BJT at Newark Electronics. We stock a wide range of Single Bipolar Junction Transistors - BJT, such as 100mA, 1A, 500mA & 3A Single Bipolar Junction Transistors - BJT from the worlds top manufacturers including: Onsemi

Filter(s) Applied

Continuous Collector Current

:

60mA

Price shown includes applicable duties and tariffs

1 Filter(s) Selected

Compare					Price for		Quantity

	MMBT5551LT1G	03P0690 Data Sheet RoHS Date/Lot Code	ONSEMI Bipolar (BJT) Single Transistor NPN 160 V 60 mA 225 mW SOT-23 Surface Mount		Each (Supplied on Full Reel) Full Reel	3000+ $0.03	Total:$96.00 Min: 3000 / Mult: 3000	NPN	160V	160V	60mA	225mW	225mW	60mA	SOT-23	Surface Mount	250hFE	3Pins	250hFE	150°C	AEC-Q101	AEC-Q101
	MMBT5551M3T5G	14AC4580 Data Sheet RoHS Date/Lot Code	ONSEMI TRANSISTOR NPN 160V 0.06A SOT-723		Each (Supplied on Cut Tape) Cut Tape Re-Reel Full Reel available	1+ $0.18 10+ $0.11 25+ $0.10 50+ $0.09 100+ $0.07 More Pricing...	Total:$0.89 Min: 5 / Mult: 5 Total:$27.50 Min: 500 / Mult: 5	NPN	160V	160V	60mA	265mW	265mW	60mA	SOT-723	Surface Mount	30hFE	3Pins	30hFE	150°C	AEC-Q101	AEC-Q101
	MMBT5551LT1G.	26AC2261 RoHS	ONSEMI Bipolar (BJT) Single Transistor NPN 160 V 60 mA 225 mW SOT-23 Surface Mount		Each (Supplied on Full Reel) Full Reel	3000+ $0.03	Total:$96.00 Min: 3000 / Mult: 3000	NPN	160V	160V	60mA	225mW	225mW	60mA	SOT-23	Surface Mount	250hFE	3Pins	250hFE	150°C	AEC-Q101	AEC-Q101
	MMBT5551M3T5G	05R9077 Data Sheet RoHS	ONSEMI Bipolar (BJT) Single Transistor NPN 160 V 60 mA 640 mW SOT-723 Surface Mount		Each (Supplied on Full Reel) Full Reel	6000+ $0.04 18000+ $0.03 30000+ $0.03	Total:$592.00 Min: 16000 / Mult: 8000	NPN	160V	160V	60mA	640mW	640mW	60mA	SOT-723	Surface Mount	80hFE	3Pins	80hFE	150°C	-	-

Items per page:

1-4 of 4 items

of 1 page(s)

Popular Suppliers

NEXPERIA

ONSEMI

VISHAY

STMICROELECTRONICS

MULTICOMP PRO

INFINEON

NXP

ROHM

New Semiconductors - Discretes

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

NEXPERIA

New onsemi 650v SiC MOSFETs

New onsemi 650v SiC MOSFETs

ONSEMI

MAT14ARZ Bipolar Transistor Array

MAT14ARZ Bipolar Transistor Array

ANALOG DEVICES

TK095N65Z5 650V N-channel power MOSFETs

TK095N65Z5 650V N-channel power MOSFETs

TOSHIBA

600V Gallium Nitride Transistor

600V Gallium Nitride (GaN) Transistor

INFINEON

600 V, 30 A Trench field-stop IGBT

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA

XPT series IGBT Thin-wafer Technolog

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications.

LITTELFUSE

MPS Series SiC Schottky Diodes

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

N-Channel Power MOSFET

N-Channel Power MOSFET

INFINEON

650 V, Gallium Nitride (GaN) FET

650 V, Gallium Nitride (GaN) FET

NEXPERIA

H-Bridge in APM16 Series

H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

ONSEMI

Silicon-carbide (SiC) N-Channel Power MOSFET

Silicon-carbide (SiC) N-Channel Power MOSFET

MICROCHIP

SIC Mosfet Module, 900V, 149A

SIC Mosfet Module, 900V, 149A

ONSEMI

onsemi EliteSiC

onsemi EliteSiC - 650V to 1700V - Now in stock

ONSEMI

High Speed Trr Series

Low Noise PrestoMOS™ - High Speed Trr Series

ROHM

IGBT 650V Field Stop Trench Technology

IGBT 650V Field Stop Trench Technology

ONSEMI