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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN60N60
Newark Part No.14J1693
Technical Datasheet
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN60N60
Newark Part No.14J1693
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id60A
On Resistance Rds(on)0.075ohm
Drain Source On State Resistance0.075ohm
Transistor Case StyleISOTOP
Transistor MountingModule
Rds(on) Test Voltage10V
Power Dissipation Pd600W
Gate Source Threshold Voltage Max4.5V
Power Dissipation600W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCTo Be Advised
Product Overview
The IXFN60N60 is a HiPerFET™ N-channel enhancement-mode Single Die MOSFET features avalanche rated and fast intrinsic rectifier.
- International standard package
- miniBLOC with aluminium nitride isolation
- Low RDS (ON) HDMOS™ process
- Unclamped inductive switching (UIS) rated
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
- High dV/dt and low trr
Applications
Power Management, Industrial, Motor Drive & Control, Lighting, Thermal Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.075ohm
Transistor Mounting
Module
Power Dissipation Pd
600W
Power Dissipation
600W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.075ohm
Transistor Case Style
ISOTOP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate