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MOSFET Modules :
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Drain Source On State Resistance
=2600µohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Power Dissipation Pd | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS SEMICONDUCTOR | Each | 1+$34.800 5+$33.090 10+$31.180 25+$29.090 50+$27.190 More Pricing... | N Channel | N Channel | 360A | 100V | 0.0026ohm | 2600µohm | 100V | 4.5V | 830W | 830W | 175°C | Trench HiperFET | |||||
Each | 300+$21.210 600+$20.790 900+$20.360 1500+$19.940 3000+$19.510 More Pricing... | - | N Channel | 360A | 100V | - | 2600µohm | 100V | 4.5V | 830W | - | 175°C | Trench HiperFET Series | ||||||
