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4N35M
OPTOCOUPLER, TRANSISTOR, 7.5KV, DIP
Image is for illustrative purposes only. Please refer to product description.
450 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $0.567 |
| 10+ | $0.308 |
| 100+ | $0.264 |
| 500+ | $0.233 |
| 1000+ | $0.200 |
| 3000+ | $0.193 |
| 10000+ | $0.183 |
Price for:Each
Minimum: 1
Multiple: 1
$0.57
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
Product Overview
The 4N35-M is a through hole general purpose phototransistor optocoupler in 6 pin DIP package. This optocoupler consist of gallium arsenide infrared emitting diode driving a silicon photo transistor. The device is mostly suitable for power supply regulators, digital logic inputs and microprocessor inputs.
- Minimum current transfer ratio of 100% at IF=10A, Vce=10V
- Isolation voltage of 4.17KVAC
- Forward current (If) of 60mA
- Single channel
- UL 1577 and DIN-EN IEC60747-5-5 approved
- Operating temperature range from -40°C to 100°C
Technical Specifications
No. of Channels
1 Channel
No. of Pins
6Pins
Isolation Voltage
7.5kV
Collector Emitter Voltage V(br)ceo
30V
SVHC
No SVHC (25-Jun-2025)
Optocoupler Case Style
DIP
Forward Current If Max
60mA
CTR Min
100%
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
