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ManufacturerONSEMI
Manufacturer Part NoMBRB2515LT4G
Newark Part No.26K3676
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMBRB2515LT4G
Newark Part No.26K3676
Technical Datasheet
Repetitive Peak Reverse Voltage15V
Average Forward Current25A
Diode ConfigurationSingle
Diode Case StyleTO-263 (D2PAK)
No. of Pins2Pins
Forward Voltage Max450mV
Forward Surge Current150A
Operating Temperature Max150°C
Diode MountingSurface Mount
Product Range-
Qualification-
SVHCLead
Product Overview
The MBRB2515LT4G is a SWITCHMODE™ Power Rectifier O-ring Function Diode with epoxy moulded case. It employs the Schottky barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free-wheeling diodes and polarity protection diodes.
- Guard-ring for stress protection
- Low forward voltage
- All external surfaces corrosion-resistant
- UL94V-0 Flammability rating
Applications
Power Management, Industrial
Technical Specifications
Repetitive Peak Reverse Voltage
15V
Diode Configuration
Single
No. of Pins
2Pins
Forward Surge Current
150A
Diode Mounting
Surface Mount
Qualification
-
Average Forward Current
25A
Diode Case Style
TO-263 (D2PAK)
Forward Voltage Max
450mV
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate