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CM100DY-24A
IGBT Module, Dual [Half Bridge], 100 A, 3 V, 672 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DY-24A
Newark Part No.19K9202
Product RangeA Series
Your Part Number
Technical Datasheet
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DY-24A
Newark Part No.19K9202
Product RangeA Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage3V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd672W
Power Dissipation672W
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product RangeA Series
SVHCTo Be Advised
Product Overview
The CM100DY-24A is a 1200V Dual IGBTMOD™ A-series Module designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
- Low drive power
- Low VCE (sat)
- Discrete super-fast recovery free-wheel diode
- Isolated baseplate for easy heat sinking
- ±20V Gate-emitter voltage (C-E short)
- 200A Peak collector current
- 100A Emitter current
Applications
Motor Drive & Control, Power Management
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
100A
Collector Emitter Saturation Voltage
3V
Power Dissipation Pd
672W
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
672W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Product Range
A Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate