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BLT50,115
Bipolar - RF Transistor, NPN, 10 V, 470 MHz, 2 W, 500 mA, SOT-223
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ManufacturerNXP
Manufacturer Part NoBLT50,115
Newark Part No.85W3334
Your Part Number
Technical Datasheet
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Product Information
ManufacturerNXP
Manufacturer Part NoBLT50,115
Newark Part No.85W3334
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max10V
Collector Emitter Voltage V(br)ceo10V
Transition Frequency470MHz
Power Dissipation2W
Power Dissipation Pd2W
Continuous Collector Current500mA
DC Collector Current500mA
DC Current Gain hFE25hFE
Transistor Case StyleSOT-223
RF Transistor CaseSOT-223
No. of Pins4Pins
DC Current Gain hFE Min25hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
10V
Power Dissipation
2W
Continuous Collector Current
500mA
DC Current Gain hFE
25hFE
RF Transistor Case
SOT-223
DC Current Gain hFE Min
25hFE
Operating Temperature Max
175°C
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage Max
10V
Transition Frequency
470MHz
Power Dissipation Pd
2W
DC Collector Current
500mA
Transistor Case Style
SOT-223
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate