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PHE13009/DG,127
Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A, 80 W, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoPHE13009/DG,127
Newark Part No.83T7191
Your Part Number
Technical Datasheet
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Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoPHE13009/DG,127
Newark Part No.83T7191
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Collector Emitter Voltage V(br)ceo400V
Continuous Collector Current12A
Power Dissipation Pd80W
Power Dissipation80W
Transistor Case StyleTO-220AB
DC Collector Current12A
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (23-Jan-2024)
Product Overview
The PHE13009 is a 400V high voltage, high speed planar passivated Silicon NPN Power Switching Transistor intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators and motor control systems.
- 150°C Junction temperature
- High voltage capability
- Low thermal resistance
- Low conduction losses due to low on-state resistance
Applications
Power Management, Motor Drive & Control, Lighting
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
400V
Power Dissipation Pd
80W
Transistor Case Style
TO-220AB
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Collector Emitter Voltage Max
400V
Continuous Collector Current
12A
Power Dissipation
80W
DC Collector Current
12A
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate