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MJE800G
Darlington Transistor, Darlington, NPN, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE800G
Newark Part No.45J1506
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Transition Frequency-
Continuous Collector Current4A
Power Dissipation40W
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-225
Operating Temperature Max150°C
DC Current Gain hFE Min750hFE
Qualification-
Product Range-
SVHCNo SVHC (19-Jan-2021)
Alternatives for MJE800G
1 Product Found
Product Overview
The MJE800G is a 4A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications.
- Complementary device
- Monolithic construction with built-in base-emitter resistors to limit leakage multiplication
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
60V
Continuous Collector Current
4A
Transistor Mounting
Through Hole
Transistor Case Style
TO-225
DC Current Gain hFE Min
750hFE
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Collector Emitter Voltage V(br)ceo
60V
Transition Frequency
-
Power Dissipation
40W
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
