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STP12NK30Z
Power MOSFET, N Channel, 300 V, 9 A, 400 mohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP12NK30Z
Newark Part No.26M3670
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.700 |
| 10+ | $1.160 |
| 100+ | $1.150 |
| 500+ | $1.140 |
| 1000+ | $1.060 |
| 2500+ | $1.020 |
| 10000+ | $0.962 |
Price for:Each
Minimum: 1
Multiple: 1
$2.70
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP12NK30Z
Newark Part No.26M3670
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id9A
Drain Source On State Resistance400mohm
On Resistance Rds(on)0.4ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd90W
Gate Source Threshold Voltage Max3.75V
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STP12NK30Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of well-established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
- 0.36Ω RDS (ON)
- Extremely high dV/dt capability
- Improved ESD capability
- 100% Avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Lighting, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9A
On Resistance Rds(on)
0.4ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
90W
Power Dissipation
90W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
400mohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability