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| 10+ | $0.503 |
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| 1000+ | $0.212 |
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSH203,215Copy
Newark Part No.75T6360
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id470mA
Drain Source On State Resistance0.9ohm
On Resistance Rds(on)0.66ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd417mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max680mV
Power Dissipation417mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSH203 is a P-channel enhancement-mode Power MOS Transistor housed subminiature surface-mount package. The device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
- Low threshold voltage
- Fast switching
- Logic level compatible
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
470mA
On Resistance Rds(on)
0.66ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
417mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.9ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
417mW
Gate Source Threshold Voltage Max
680mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
