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IRFZ34PBF
Power MOSFET, N Channel, 60 V, 30 A, 0.05 ohm, TO-220, Through Hole
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFZ34PBF
Newark Part No.63J7122
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id30A
On Resistance Rds(on)0.05ohm
Drain Source On State Resistance0.05ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd88W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max4V
Power Dissipation88W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
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Product Overview
The IRFZ34PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- -55 to 175°C Operating temperature range
- Ease of paralleling
- Simple drive requirements
Applications
Industrial, Power Management, Commercial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.05ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
88W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.05ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
Power Dissipation
88W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability