S25FS512SDSBHB210

S25FS512SDSBHB210 is a S25FS512S non-volatile serial peripheral interface (SPI) flash memory IC using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance, 65nm process lithography. It connects to a host system via a serial peripheral interface (SPI). The FS-S eclipse architecture features a page programming buffer that allows up to 512bytes to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. It offers high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It is an excellent solution for systems with limited space, signal connections, and power. It is an ideal for code shadowing to RAM, executing code directly (XIP), and storing reprogrammable data.

• Serial peripheral interface (SPI) with multi-I/O, SPI clock polarity and phase modes 0 and 3
• Multi I/O command subset and footprint compatible with S25FL-P, and S25FL-S SPI families
• Commands: normal, fast, dual I/O, quad I/O, DDR quad I/O, modes: burst wrap, continuous (XIP), QPI
• Serial flash discoverable parameters and common flash interface (CFI) for configuration information
• 256 or 512bytes page programming buffer, program suspend and resume
• Automatic error checking and correction ECC – internal hardware ECC with single bit error correction
• Uniform 256KB blocks, erase suspend and resume, erase status evaluation
• One time program (OTP) array of 1024 bytes, block protection, advanced sector protection (ASP)
• 512Mb density, 80MHz DDR speed, 24-ball BGA package
• Automotive, AEC-Q100 grade 2 (-40°C to +105°C) temperature range