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BSM10GD120DN2BOSA1
IGBT Module, Three Phase Full Bridge, 15 A, 2.7 V, 80 W, 125 °C, EconoPACK
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ManufacturerINFINEON
Manufacturer Part NoBSM10GD120DN2BOSA1
Newark Part No.61M5051
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSM10GD120DN2BOSA1
Newark Part No.61M5051
Technical Datasheet
IGBT ConfigurationThree Phase Full Bridge
Transistor PolarityN Channel
DC Collector Current15A
Continuous Collector Current15A
Collector Emitter Saturation Voltage2.7V
Collector Emitter Saturation Voltage Vce(on)2.7V
Power Dissipation Pd80W
Power Dissipation80W
Junction Temperature, Tj Max125°C
Operating Temperature Max125°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleEconoPACK
IGBT TerminationPress Fit
No. of Pins17Pins
Collector Emitter Voltage Max1.2kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The BSM10GD120DN2 is a 1200V IGBT Power Module with 3-phase full-bridge and fast free-wheel diodes.
Applications
Power Management
Technical Specifications
IGBT Configuration
Three Phase Full Bridge
DC Collector Current
15A
Collector Emitter Saturation Voltage
2.7V
Power Dissipation Pd
80W
Junction Temperature, Tj Max
125°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Press Fit
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (17-Jan-2023)
Transistor Polarity
N Channel
Continuous Collector Current
15A
Collector Emitter Saturation Voltage Vce(on)
2.7V
Power Dissipation
80W
Operating Temperature Max
125°C
Transistor Case Style
EconoPACK
No. of Pins
17Pins
IGBT Technology
-
Product Range
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate