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MRF6V2300NBR5
RF FET Transistor, 110 V, 10 MHz, 600 MHz, TO-272
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNXP
Manufacturer Part NoMRF6V2300NBR5
Newark Part No.95M9601
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
Packaging Options
Product Information
ManufacturerNXP
Manufacturer Part NoMRF6V2300NBR5
Newark Part No.95M9601
Technical Datasheet
Drain Source Voltage Vds110V
Continuous Drain Current Id-
Power Dissipation-
Operating Frequency Min10MHz
Power Dissipation Pd-
Operating Frequency Max600MHz
Transistor Case StyleTO-272
RF Transistor CaseTO-272
No. of Pins4Pins
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MRF6V2300NBR5 is a N-channel RF Power FET designed primarily for CW large signal output and driver applications with frequencies up to 600MHz. Devices are unmatched and are suitable for use in scientific applications.
- Characterized with series equivalent large signal impedance parameters
- Qualified up to a maximum of 50VDD operation
- Integrated ESD protection
- 225°C Capable plastic package
Applications
Industrial, Medical, Power Management
Technical Specifications
Drain Source Voltage Vds
110V
Power Dissipation
-
Power Dissipation Pd
-
Transistor Case Style
TO-272
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Operating Frequency Min
10MHz
Operating Frequency Max
600MHz
RF Transistor Case
TO-272
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
MSL 3 - 168 hours
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate