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STW33N60M2
Power MOSFET, N Channel, 600 V, 26 A, 0.108 ohm, TO-247, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW33N60M2Copy
Newark Part No.45AC7787
Product RangeMDmesh II Plus
Your Part Number
No Longer Available
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW33N60M2Copy
Newark Part No.45AC7787
Product RangeMDmesh II Plus
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id26A
On Resistance Rds(on)0.108ohm
Drain Source On State Resistance0.108ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Power Dissipation Pd190W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh II Plus
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.108ohm
Transistor Case Style
TO-247
Power Dissipation Pd
190W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
MDmesh II Plus
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
26A
Drain Source On State Resistance
0.108ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability