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IRLB3813PBF
Power MOSFET, N Channel, 30 V, 260 A, 0.00195 ohm, TO-220AB, Through Hole
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25 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $2.220 |
| 10+ | $1.160 |
| 100+ | $1.050 |
| 500+ | $0.834 |
| 1000+ | $0.786 |
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Multiple: 1
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLB3813PBF
Newark Part No.25R4660
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id260A
Drain Source On State Resistance1950µohm
On Resistance Rds(on)0.0016ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd230W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation230W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRLB3813PBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is optimized for UPS/inverter applications. It is suitable for high frequency isolated DC-to-DC converters with synchronous rectification for telecom use.
- Ultra-low gate impedance
- Very low RDS (ON) at 4.5V VGS
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
1950µohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
230W
Gate Source Threshold Voltage Max
1.9V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
260A
On Resistance Rds(on)
0.0016ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
230W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate