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FDG6303N
Dual MOSFET, N Channel, 25 V, 500 mA, 0.34 ohm
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ManufacturerONSEMI
Manufacturer Part NoFDG6303N
Newark Part No.58K1450
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 11 week(s)
Packaging Options
Cut Tape
| Quantity | Price |
|---|---|
| 2500+ | $0.183 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6303N
Newark Part No.58K1450
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id500mA
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel500mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.34ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDG6303N is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- Gate-source Zener for ESD ruggedness
- Compact industry standard surface-mount-package
- -0.5 to 8V Gate to source voltage
- 0.5A Continuous drain/output current
- 1.5A Pulsed drain/output current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
25V
Continuous Drain Current Id N Channel
500mA
Drain Source On State Resistance N Channel
0.34ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Alternatives for FDG6303N
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
WARNINGProposition 65