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FQP22N30
Power MOSFET, N Channel, 300 V, 21 A, 0.16 ohm, TO-220, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFQP22N30
Newark Part No.34C0488
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP22N30
Newark Part No.34C0488
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id21A
Drain Source On State Resistance0.16ohm
On Resistance Rds(on)0.16ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd170W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max5V
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The FQP22N30 is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 47nC typical low gate charge
- 40pF typical low Crss
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.16ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
170W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
On Resistance Rds(on)
0.16ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
Power Dissipation
170W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65