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2N5551TA
Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 625 mW, TO-92, Through Hole
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ManufacturerONSEMI
Manufacturer Part No2N5551TA
Newark Part No.31Y5847
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N5551TA
Newark Part No.31Y5847
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo160V
Collector Emitter Voltage Max160V
Continuous Collector Current600mA
DC Collector Current600mA
Power Dissipation Pd625mW
Power Dissipation625mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min30hFE
DC Current Gain hFE30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Alternatives for 2N5551TA
3 Products Found
Product Overview
The 2N5551TA is a NPN Bipolar Transistor designed for general-purpose high-voltage amplifiers and gas discharge display drivers.
- -55 to 150°C Operating junction temperature range
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
160V
DC Collector Current
600mA
Power Dissipation
625mW
Transistor Mounting
Through Hole
Transition Frequency
100MHz
DC Current Gain hFE
30hFE
Product Range
-
MSL
-
Collector Emitter Voltage V(br)ceo
160V
Continuous Collector Current
600mA
Power Dissipation Pd
625mW
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate