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SI4151DY-T1-GE3
MOSFET, P-CH, 30V, 20.5A, SOIC-8 ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSI4151DY-T1-GE3
Newark Part No.30AK7446
Product RangeTrenchFET Gen IV Series
Your Part Number
277 In Stock
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Delivery in 2-4 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $2.500 |
| 10+ | $1.680 |
| 25+ | $1.530 |
| 50+ | $1.370 |
| 100+ | $1.210 |
| 250+ | $1.170 |
| 500+ | $1.130 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.50
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4151DY-T1-GE3
Newark Part No.30AK7446
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20.5A
On Resistance Rds(on)0.00625ohm
Drain Source On State Resistance6250µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd5.6W
Power Dissipation5.6W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.00625ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
5.6W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
20.5A
Drain Source On State Resistance
6250µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
5.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability