Print Page

FCP11N60

Brand: ONSEMI
SKU: 50H4189
Availability: OutOfStock

Power MOSFET, N Channel, 650 V, 11 A, 0.38 ohm, TO-220, Through Hole

Image is for illustrative purposes only. Please refer to product description.

ManufacturerONSEMI

Manufacturer Part NoFCP11N60

Newark Part No.50H4189

Your Part Number

Technical Datasheet

Data Sheet

See all Technical Docs

Available to Order

Manufacturer Standard Lead Time: 16 week(s)

Price shown includes applicable duties and tariffs

Quantity	Price
100+	$2.440
250+	$2.280
500+	$2.110

Price for:Each

Minimum: 150

Multiple: 50

$366.00

Line Note

Added to your Order Confirmation, Invoice, and Dispatch note for this order only.

Product Information

ManufacturerONSEMI

Manufacturer Part NoFCP11N60

Newark Part No.50H4189

Technical Datasheet

Data Sheet

Channel TypeN Channel

Transistor PolarityN Channel

Drain Source Voltage Vds650V

Continuous Drain Current Id11A

On Resistance Rds(on)0.32ohm

Drain Source On State Resistance0.38ohm

Transistor MountingThrough Hole

Power Dissipation Pd125W

Rds(on) Test Voltage10V

Gate Source Threshold Voltage Max5V

Transistor Case StyleTO-220

Power Dissipation125W

No. of Pins3Pins

Operating Temperature Max150°C

Qualification-

Product Range-

MSL-

SVHCLead

Product Overview

The FCP11N60 is a 650V N-channel SuperFET® MOSFET, high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. This product is general usage and suitable for many different applications.

Ultra low gate charge
Low effective output capacitance
100% Avalanche tested

Applications

Power Management, Industrial, Communications & Networking

Technical Specifications

Channel Type

N Channel

Drain Source Voltage Vds

650V

On Resistance Rds(on)

0.32ohm

Transistor Mounting

Through Hole

Rds(on) Test Voltage

10V

Transistor Case Style

TO-220

No. of Pins

3Pins

Qualification

MSL

Transistor Polarity

N Channel

Continuous Drain Current Id

11A

Drain Source On State Resistance

0.38ohm

Power Dissipation Pd

125W

Gate Source Threshold Voltage Max

Power Dissipation

125W

Operating Temperature Max

150°C

Product Range

SVHC

Lead

Technical Docs (2)

Product Change Notice EN

Technical Data Sheet EN

Alternatives for FCP11N60

1 Product Found

Associated Products

5 Products Found

Legislation and Environmental

US ECCN:EAR99

EU ECCN:Unknown

RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes