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Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.784 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$2,352.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7716ADN-T1-GE3Copy
Newark Part No.18X0024
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id16A
Drain Source On State Resistance0.0135ohm
On Resistance Rds(on)0.0105ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd27.7W
Transistor Case StylePowerPAK 1212
Gate Source Threshold Voltage Max2.5V
Power Dissipation27.7W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI7716ADN-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC conversion applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0135ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
27.7W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.0105ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK 1212
Power Dissipation
27.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
