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2N7002W
Power MOSFET, N Channel, 78 V, 115 mA, 13.5 ohm, SOT-323, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part No2N7002W
Newark Part No.
Re-Reel31Y5854
Cut Tape31Y5854
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.392 |
| 10+ | $0.248 |
| 25+ | $0.220 |
| 50+ | $0.192 |
| 100+ | $0.164 |
| 250+ | $0.146 |
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7002W
Newark Part No.
Re-Reel31Y5854
Cut Tape31Y5854
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds78V
Continuous Drain Current Id115mA
On Resistance Rds(on)2.53ohm
Drain Source On State Resistance13.5ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Power Dissipation Pd200mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.76V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Alternatives for 2N7002W
4 Products Found
Product Overview
The 2N7002W is a N-channel enhancement-mode FET with low ON-resistance and low gate threshold voltage.
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Ultra-small surface-mount package
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
78V
On Resistance Rds(on)
2.53ohm
Transistor Case Style
SOT-323
Power Dissipation Pd
200mW
Gate Source Threshold Voltage Max
1.76V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
115mA
Drain Source On State Resistance
13.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate