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MTB30P06VT4G
Power MOSFET, P Channel, 60 V, 30 A, 0.08 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoMTB30P06VT4G
Newark Part No.
Re-Reel09R9556
Cut Tape09R9556
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerONSEMI
Manufacturer Part NoMTB30P06VT4G
Newark Part No.
Re-Reel09R9556
Cut Tape09R9556
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id30A
Drain Source On State Resistance0.08ohm
On Resistance Rds(on)0.067ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd125W
Gate Source Threshold Voltage Max2.6V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.08ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.6V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.067ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
125W
Power Dissipation
125W
Operating Temperature Max
175°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate