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MTB30P06VT4G
Power MOSFET, P Channel, 60 V, 30 A, 0.08 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoMTB30P06VT4G
Newark Part No.09R9556
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMTB30P06VT4G
Newark Part No.09R9556
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id30A
Drain Source On State Resistance0.08ohm
On Resistance Rds(on)0.067ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.08ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
2.6V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.067ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
175°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate