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CM100DU-24H
IGBT Module, Dual [Half Bridge], 100 A, 1.2 kV, 600 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DU-24H
Newark Part No.09B2201
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DU-24H
Newark Part No.09B2201
Technical Datasheet
Transistor PolarityDual N Channel
IGBT ConfigurationDual [Half Bridge]
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage1.2kV
Power Dissipation600W
Power Dissipation Pd600W
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
Dual N Channel
DC Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
600W
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
No. of Pins
7Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
100A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation Pd
600W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate