Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFP3206PBF
Newark Part No.08N6350
Your Part Number
Technical Datasheet
14 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $4.960 |
| 10+ | $3.940 |
| 25+ | $2.890 |
| 50+ | $2.660 |
| 100+ | $2.410 |
| 250+ | $2.310 |
| 800+ | $2.200 |
Price for:Each
Minimum: 1
Multiple: 1
$4.96
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP3206PBF
Newark Part No.08N6350
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id120A
On Resistance Rds(on)0.0024ohm
Drain Source On State Resistance2400µohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd280W
Power Dissipation280W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFP3206PBF is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0024ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation Pd
280W
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
120A
Drain Source On State Resistance
2400µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation
280W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability