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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSP315P
Newark Part No.06M4059
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.17A
Drain Source On State Resistance0.8ohm
On Resistance Rds(on)0.8ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.8W
Transistor Case StyleSOT-223
Gate Source Threshold Voltage Max1.5V
Power Dissipation1.8W
No. of Pins4Pins
Operating Temperature Max150°C
QualificationAEC-Q101
Product Range-
Automotive Qualification StandardAEC-Q101
SVHCTo Be Advised
Product Overview
BSP315P is a SIPMOS® small-signal-transistor qualified according to AEC Q101.
- P-channel, enhancement mode and logic level
- Avalanche rated and dv/dt rated
- Drain source voltage is -60V
- Drain-source on-state resistance RDS(on) is 0.8ohm
- Continuous drain current ID is -1.17A at TA = 25°C
- Reverse diode dv/dt is 6kV/µs at IS = -1.17A, VDS = -48V, di/dt = 200A/µs, Tjmax = 150 °C
- Gate source voltage VGS is ±20V
- Power dissipation Ptot is 1.8W at TA = 25°C
- IEC climatic category; DIN IEC 68-1 55/150/56
- PG-SOT223 package, operating and storage temperature (Tj, Tstg) range from -55 to 150°C
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.8W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
4Pins
Qualification
AEC-Q101
Automotive Qualification Standard
AEC-Q101
SVHC
To Be Advised
Transistor Polarity
P Channel
Continuous Drain Current Id
1.17A
On Resistance Rds(on)
0.8ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-223
Power Dissipation
1.8W
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
