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SI9435BDY-T1-E3
Power MOSFET, P Channel, 30 V, 5.7 A, 42 mohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI9435BDY-T1-E3
Newark Part No.06J8231
Your Part Number
Technical Datasheet
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9435BDY-T1-E3
Newark Part No.06J8231
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.7A
Drain Source On State Resistance42mohm
On Resistance Rds(on)0.07ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (07-Nov-2024)
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Product Overview
The SI9435BDY-T1-E3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
42mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
5.7A
On Resistance Rds(on)
0.07ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability