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IXTA12N65X2
MOSFET, N-CH, 650V, 12A, TO-263AA
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTA12N65X2Copy
Manufacturer Standard Lead Time29 weeks
Newark Part No.02AC9829
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 1+ | $4.520 |
| 10+ | $3.910 |
| 25+ | $3.420 |
| 50+ | $3.210 |
| 100+ | $2.790 |
| 250+ | $2.330 |
| 500+ | $2.260 |
Price for:Each
Minimum: 1
Multiple: 1
$4.52
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTA12N65X2Copy
Manufacturer Standard Lead Time29 weeks
Newark Part No.02AC9829
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id12A
On Resistance Rds(on)0.3ohm
Drain Source On State Resistance0.3ohm
Transistor Case StyleTO-263AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation180W
Power Dissipation Pd180W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (17-Jan-2023)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.3ohm
Transistor Case Style
TO-263AA
Rds(on) Test Voltage
10V
Power Dissipation
180W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.5V
Power Dissipation Pd
180W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2023)
Technical Docs (1)
Alternatives for IXTA12N65X2
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
