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NTTFS4C05NTAG
MOSFET, N-CH, 30V, 19.4A, WDFN
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTTFS4C05NTAG
Newark Part No.02AC3813
Your Part Number
Technical Datasheet
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTTFS4C05NTAG
Newark Part No.02AC3813
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id19.4A
Drain Source On State Resistance3600µohm
On Resistance Rds(on)0.0029ohm
Transistor Case StyleWDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation Pd2.16W
Power Dissipation2.16W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3600µohm
Transistor Case Style
WDFN
Rds(on) Test Voltage
10V
Power Dissipation Pd
2.16W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
19.4A
On Resistance Rds(on)
0.0029ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation
2.16W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
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