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SUD08P06-155L-GE3
Power MOSFET, P Channel, 60 V, 8.2 A, 0.155 ohm, TO-252 (DPAK), Surface Mount
No Longer Available
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSUD08P06-155L-GE3
Newark Part No.
Full Reel01X0089
Re-Reel01AC5033
Cut Tape01AC5033
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id8.2A
Drain Source On State Resistance0.155ohm
On Resistance Rds(on)0.125ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation20.8W
Power Dissipation Pd20.8W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCLead (21-Jan-2025)
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Product Overview
- P-channel 60V (D-S) MOSFET
- TrenchFET® power MOSFETs
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.155ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
20.8W
No. of Pins
3Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
8.2A
On Resistance Rds(on)
0.125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
20.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate