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SI4465ADY-T1-GE3
Power MOSFET, P Channel, 8 V, 13.7 A, 0.009 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 500+ | $1.080 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$2,700.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4465ADY-T1-GE3
Newark Part No.26R1880
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id13.7A
On Resistance Rds(on)0.016ohm
Drain Source On State Resistance0.009ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Power Dissipation Pd6.5W
Rds(on) Test Voltage1.8V
Gate Source Threshold Voltage Max450mV
Power Dissipation6.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
8V
On Resistance Rds(on)
0.016ohm
Transistor Case Style
SOIC
Power Dissipation Pd
6.5W
Gate Source Threshold Voltage Max
450mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
13.7A
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
1.8V
Power Dissipation
6.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate