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Microchip mSiC™ devices: superior efficiency and cost savings over silicon solutions

mSiC™ MOSFET and mSiC Diode product lines from Microchip increase your system efficiency over silicon MOSFET and IGBT solutions while lowering your cost of ownership by enabling downsized systems and smaller/lower-cost cooling.

Silicon Carbide: What is Microchip’s history with Silicon Carbide?

Featured products

3300V, 25 mOhm, TO-247-4 Notch, MA Family Discrete mSiC™ MOSFET

The MSC025SMA330B4N is part of our MA Family of mSiC MOSFETs. This 3300V (3.3 kV) SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 25 mOhms, minimizing conduction losses and enhancing overall system efficiency. 

3300V-25-mOhm-TO-247-4-Notch

Features

  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • Avalanche-energy rated
  • RoHS compliant
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All Microchip SiC MOSFET Products

Find a huge range of Silicon Carbide (SiC) MOSFETs & Modules

3300V-25-mOhm-TO-247-4-Notch

Features

  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • Avalanche-energy rated
  • RoHS compliant
Buy now

MSC400SMA330B4N

This 3300V (3.3 kV) mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 12A ensures robust performance in high-power applications. 

300V-400-mOhm-TO-247-4-Notch

Features

  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • Avalanche-energy rated
  • RoHS compliant
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MSC090SDA330B2

This 3300V (3.3 kV) mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 184A ensures robust performance in high-power applications.

3300V-90A-Silicon-Carbide

Features

  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • Avalanche-energy rated
  • RoHS compliant
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MSC030SDA330B

This 3300V (3.3 kV) mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 62A ensures robust performance in high-power applications.  

3300-V-30A-Silicon-Carbide

Features

  • No reverse recovery
  • Low forward voltage
  • Low leakage current
  • Avalanche-energy rated
  • RoHS compliant
Buy now

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Dev tools

1200V Dual-Channel

Augmented High Performance SiC Core 1 Evaluation Board ASDAK-2ASC-12A1HP-62

Microchip’s Accelerated Silicon Carbide Development Kits provide a complete hardware and software solution to help engineers quickly optimize the performance of SiC modules and systems.

These kits feature:

  • AgileSwitch® Intelligent Configuration Tool (ICT) and a Device Programmer for easy system tuning. No soldering required
  • Software-based configuration of key drive parameters, including:
    • On/Off Gate Voltages
    • DC Link and Temperature Fault Thresholds
    • Augmented Switching™ profiles
  • Even small adjustments to the Augmented Switching profiles can lead to significant improvements in switching efficiency, reduced overshoot and ringing, and enhanced short-circuit protection.

This toolset empowers designers to fine-tune SiC performance with precision and speed—streamlining development and accelerating time to market.

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1200V-Dual-Channel

Single channel discrete gate drive board (Isolated)

Single-Channel-Discrete

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Videos

Microchip is... silicon carbide

Refrence designs & development boards

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