STP24N60DM2
MOSFET de Potencia, Canal N, 600 V, 18 A, 0.175 ohm, TO-220AB, Agujero Pasante
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| Cantidad | Precio |
|---|---|
| 1+ | $4.090 |
| 10+ | $1.900 |
| 25+ | $1.840 |
| 50+ | $1.790 |
| 100+ | $1.740 |
| 250+ | $1.650 |
| 500+ | $1.560 |
Información del producto
Resumen del producto
STP24N60DM2 is a N-channel 600V, 0.175 ohm typ, 18A FDmesh II Plus™ low Qg Power MOSFET in a TO-220 package. This FDmesh II Plus™ low Qg Power MOSFET with intrinsic fast-recovery body diode is produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. Therefore, suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
- Extremely low gate charge and input capacitance
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche capabilities
- Operating junction temperature of 150°C
- Suited for switching applications
Especificaciones técnicas
N Channel
600
0.175ohm
TO-220AB
10
4
3Pines
FDmesh II Plus
MSL 1 - Unlimited
Canal N
18
0.175
Through Hole
150W
150
150
-
No SVHC (25-Jun-2025)
Documentos técnicos (2)
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Legislación y medioambiente
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