IRF7105TRPBF
MOSFET Dual, Canal complementario N y P, 25 V, 25 V, 3.5 A, 3.5 A, 0.083 ohm
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| Cantidad | Precio |
|---|---|
| 1+ | $1.550 |
| 10+ | $1.030 |
| 25+ | $0.981 |
| 50+ | $0.848 |
| 100+ | $0.716 |
| 250+ | $0.715 |
| 500+ | $0.576 |
| 1000+ | $0.535 |
Información del producto
Resumen del producto
The IRF7105TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Especificaciones técnicas
Complementary N and P Channel
25
25
3.5
0.083
8Pines
2
-
MSL 1 - Unlimited
0
0
3.5
0.083
SOIC
2
150
-
No SVHC (25-Jun-2025)
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Legislación y medioambiente
RoHS
RoHS
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