IMDQ75R140M1HXUMA1
MOSFET de carburo de silicio, Canal N, 17 A, 750 V, 0.182 ohm, HDSOP
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| Cantidad | Precio |
|---|---|
| 1+ | $5.110 |
| 10+ | $3.370 |
| 25+ | $3.130 |
| 50+ | $2.880 |
| 100+ | $2.650 |
| 250+ | $2.550 |
| 500+ | $2.470 |
| 1500+ | $2.380 |
Información del producto
Resumen del producto
IMDQ75R140M1HXUMA1 is a CoolSiC™ MOSFET 750V Generation 1 (G1) in Q-DPAK package. The CoolSiC™ MOSFET 750V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750V strengths offering more density, optimized power loop design and less system and assembly cost. Typical applications include solid state relays and circuit breakers, EV charging infrastructure, solar PV inverters, UPS (uninterruptable power supplies, energy storage and battery formation and telecom and server SMPS.
- 140mohm RDs(on) typical
- Highly robust 750V technology, 100% avalanche tested
- Enhanced robustness and reliability for bus voltages beyond 500V
- Superior efficiency in hard switching
- Higher switching frequency in soft switching topologies
- Robustness against parasitic turn on for unipolar gate driving
- Best‑in‑class thermal dissipation
- Reduced switching losses through improved gate control
Especificaciones técnicas
-
17
0.182
22Pines
5.6
175
No SVHC (25-Jun-2025)
N Channel
750
HDSOP
18
100
CoolSiC Series
Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto