BSC13DN30NSFDATMA1
MOSFET de Potencia, Canal N, 300 V, 16 A, 0.13 ohm, TDSON, Montaje Superficial
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| Cantidad | Precio |
|---|---|
| 1+ | $3.89 |
| 10+ | $2.67 |
| 25+ | $2.57 |
| 50+ | $2.23 |
| 100+ | $1.89 |
| 250+ | $1.87 |
Información del producto
Resumen del producto
The BSC13DN30NSFDATMA1 from Infineon is a 300V OptiMOST™3 N-channel power MOSFET in 8 pin TDSON package. This new OptiMOS™ Fast Diode (FD) Infineon’s latest generation power MOSFETs are optimized for body diode hard commutation, hard switching behaviour, industry’s lowest Rds(on), Qg and Qrr, highest system reliability, system cost reduction, highest efficiency and power density and easy to design products. It is a perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control for 48V to 110V systems and DC to AC inverter.
- Excellent gate charge x RDS(on) product (figure of merit)
- Very low on-resistance RDS(on)
- Ideal for high-frequency switching and synchronous rectification
- Drain source voltage VDS is 300V
- Maximum RDS(on) is 130mohm, continuous drain current ID is 16A
- Operating temperature range from -55°C to 175°C
- Power dissipation is 150W
- Maximum gate source voltage VGS is 20V
Especificaciones técnicas
0
300
0.13ohm
TDSON
10
3
8Pines
OptiMOS
MSL 1 - Unlimited
N Channel
16
0
Surface Mount
0
150
175
-
No SVHC (21-Jan-2025)
Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto
WARNINGProposition 65