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SIS862DN-T1-GE3
MOSFET Transistor, N Channel, 40 A, 60 V, 0.007 ohm, 10 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $1.420 |
| 10+ | $0.988 |
| 25+ | $0.901 |
| 50+ | $0.813 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS862DN-T1-GE3
Newark Part No.40X8692
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id40A
Drain Source On State Resistance8500µohm
On Resistance Rds(on)0.007ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd52W
Gate Source Threshold Voltage Max-
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
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Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
8500µohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
-
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
On Resistance Rds(on)
0.007ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
52W
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate