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ALF16N20W
Power MOSFET, Audio, N Channel, 200 V, 16 A, TO-264, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoALF16N20W
Newark Part No.23T0785
Technical Datasheet
No Longer Available
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoALF16N20W
Newark Part No.23T0785
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id16A
Drain Source On State Resistance-
On Resistance Rds(on)-
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Power Dissipation Pd250W
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max-
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (16-Jul-2019)
Product Overview
The ALF16N20W is a 200V N-channel lateral Power MOSFET designed specifically for linear audio amplifier applications. It is an enhanced oscillation suppression multi-device application. The complementary P-channel MOSFET is ALF16P20W.
- High-speed for high bandwidth amplifiers
- High voltage rating
- ±20V Gate to source voltage
- 16A Body drain diode current
- 0.5°C/W Thermal resistance, junction to case
Applications
Audio
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
-
Transistor Mounting
Through Hole
Rds(on) Test Voltage
-
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (16-Jul-2019)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
-
Transistor Case Style
TO-264
Power Dissipation Pd
250W
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jul-2019)
Download Product Compliance Certificate
Product Compliance Certificate