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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS86540
Newark Part No.55W4091
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id18A
Drain Source On State Resistance3700µohm
On Resistance Rds(on)0.0037ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Power Dissipation Pd5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.1V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Alternatives for FDS86540
1 Product Found
Product Overview
The FDS86540 is a N-channel MOSFET produced using PowerTrench® process. It is designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON), fast switching speed and body diode reverse recovery performance. It is suitable for synchronous rectifier and load switch applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handing capability in a widely used surface-mount package
- 100% UIL tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
3700µohm
Transistor Case Style
SOIC
Power Dissipation Pd
5W
Gate Source Threshold Voltage Max
3.1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.0037ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate