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875 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.768 |
| 10+ | $0.479 |
| 25+ | $0.412 |
| 50+ | $0.344 |
| 100+ | $0.304 |
| 250+ | $0.275 |
| 500+ | $0.248 |
| 1000+ | $0.219 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.84
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Product Information
ManufacturerNEXPERIA
Manufacturer Part No2N7002PV,115
Newark Part No.59T0226
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id350mA
Drain Source On State Resistance1ohm
On Resistance Rds(on)1ohm
Transistor Case StyleSOT-666
Transistor MountingSurface Mount
Power Dissipation Pd500mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.75V
Power Dissipation500mW
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The 2N7002PV is a N-channel enhancement-mode MOSFET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits.
- Logic-level compatible
- Very fast switching
- AEC-Q101 qualified
Applications
Automotive, Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
350mA
On Resistance Rds(on)
1ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1ohm
Transistor Case Style
SOT-666
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
1.75V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability