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BSZ180P03NS3EGATMA1
MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ180P03NS3EGATMA1
Newark Part No.97Y1272
Product RangeOptiMOS P3
Technical Datasheet
Packaging Options
784 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.720 |
| 10+ | $0.467 |
| 25+ | $0.418 |
| 50+ | $0.368 |
| 100+ | $0.319 |
| 250+ | $0.283 |
| 500+ | $0.246 |
| 1000+ | $0.206 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.72
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ180P03NS3EGATMA1
Newark Part No.97Y1272
Product RangeOptiMOS P3
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id39.6A
On Resistance Rds(on)0.0135ohm
Drain Source On State Resistance0.0135ohm
Transistor Case StylePG-TSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd40W
Gate Source Threshold Voltage Max2.5V
Power Dissipation40W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeOptiMOS P3
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0135ohm
Transistor Case Style
PG-TSDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
OptiMOS P3
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
39.6A
Drain Source On State Resistance
0.0135ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
40W
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability